Bruckewell innovative power discretes bring the advantage to modern power designs. Founded in 2007 Bruckewell has developed a lot of different discretes in Si, SiC and GaN technology.
Diodes of nearly all kind are the smallest discretes and needed in nearly all designs. ZVS, FRD, Switching, ESD/EMI protection, Schottky, Zener or SiC diodes enhance your power design.
Ready to use bridge rectifiers are available up to 50A @ 1000V even for high power requirements.
A broad portfolio of bipolar NPN and PNP transistors in Si technology are available up to 400V/-300V. The product group of digital transistors embedd the bias resistors already.
MV & HV Si-MOSFETs are available for established power designs.
SiC MOSFETs and Diodes up to 1200V give designers the basis to cope with current and future needs in power design going to more robust, very high efficiency and small space designs.
A lot of products are available as KGD or wafer option for power module integrators
For more details on Bruckewell innovative power discretes ask the Ineltek team.